^zmi-l.onau.cto'i , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn rf transistor BFR520 description ? high power gain ? high current gain bandwidth product ? low noise figure applications ? designed for rf frontend in wideband applications in the ghz range.such as analog and digital cellular telephones, cordless. absolute maximum ratings(ta=25'c) symbol vcbo vces vebo ic pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector power dissipation @tc=25c junction temperature storage temperature range value 20 15 2.5 70 0.3 175 -65-150 unit v v v ma w 'c c ^^ sot- 2 3 package -h,m ^?111 f tl marking b c 4 i li' i u:^l 1 i*d*i l? 6? -| / \ lp n t 1 l 1 : base ~ ? emitter 3 ; collector -1 l_l 1 ? 1 . ? i- =j | ml dim a b c d il- k k l m 1l mm min 0. 37 1,19 2. 10 0.89 1. 78 2.65 1. 10 0. -!5 0.076 max 0.51 1. 10 2,50 1.05 2.05 3.05 1.20 0.61 0. its m 4 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn rf transistor BFR520 electrical characteristics tc=25c unless otherwise specified symbol icbo hfe fi cob pg pg 1 s21e i 2 nf nf parameter collector cutoff current dc current gain current-gain ? bandwidth product output capacitance power gain power gain insertion power gain noise figure noise figure conditions vcb= 6v; ie= 0 lc= 20ma ; vce= 6v lc= 20ma ; vce= 6v; f= 1ghz ie= 0 ; vgb= 6v; f= 1 mhz lc= 20ma ; vce= 6v; f= 900mhz lc= 20ma ; vce= 6v; f= 2ghz lc= 20ma ; vce= 6v; f= 900mhz lc= 5ma ; vce= 6v; f= 900mhz lc= 20ma ; vce= 6v; f= 900mhz min 60 13 typ. 9 0.5 15 9 14 1.1 1.6 max 0.05 250 1.6 2.1 unit na ghz pf db db db db db 400 ptot (mwj 300 200 100 \0 100 150ts(c'c)200 power derating curve 250 200 150 100 50 0"-^ vce=6v 10 lc(ma)102 dc current gain as a function of collector current
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